2N6661 | Yingxinyuan Int'l(Group) Ltd

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2N6661

MOSFET N-CH 90V 350MA TO39

Mfr. Part Number

2N6661

Manufacturer

Microchip Technology

Datasheet

Description

MOSFET N-CH 90V 350MA TO39

RoHS Status

Lead Free / RoHS Complaint

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2N6661

Microchip Technology

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2N6661

Microchip Technology

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90 V

Current - Continuous Drain (Id) @ 25°C

350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50 pF @ 24 V

FET Feature

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

Brand Introduction

Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.