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UF3SC065030B7S
650V/30MOHM, SIC, STACKED FAST C
Mfr. Part Number
UF3SC065030B7S
Manufacturer
UnitedSiC
Datasheet
Datasheet
Description
650V/30MOHM, SIC, STACKED FAST C
RoHS Status
Lead Free / RoHS Complaint
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UF3SC065030B7S
UnitedSiC
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UF3SC065030B7S
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
35mOhm @ 40A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 12 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.

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