UF3SC065030B7S | Yingxinyuan Int'l(Group) Ltd

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UF3SC065030B7S

650V/30MOHM, SIC, STACKED FAST C

Mfr. Part Number

UF3SC065030B7S

Manufacturer

UnitedSiC

Datasheet

Description

650V/30MOHM, SIC, STACKED FAST C

RoHS Status

Lead Free / RoHS Complaint

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UF3SC065030B7S

UnitedSiC

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UF3SC065030B7S

UnitedSiC

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

SiCFET (Cascode SiCJFET)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

35mOhm @ 40A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

43 nC @ 12 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 100 V

FET Feature

Power Dissipation (Max)

214W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.