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STB26NM60N
MOSFET N-CH 600V 20A D2PAK
Mfr. Part Number
STB26NM60N
Manufacturer
STMicroelectronics
Datasheet
Description
MOSFET N-CH 600V 20A D2PAK
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 2,698
Unit Price
$7.3200
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Reference Price
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1$ 7.3200
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STB26NM60N
STMicroelectronics
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Brand Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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