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NTB004N10G
MOSFET N-CH 100V 201A TO263
Mfr. Part Number
NTB004N10G
Description
MOSFET N-CH 100V 201A TO263
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
201A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11900 pF @ 50 V
Power Dissipation (Max)
340W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK-3 (TO-263-3)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Brand Introduction
onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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