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TSM4NB60CH C5G
MOSFET N-CH 600V 4A TO251
Mfr. Part Number
TSM4NB60CH C5G
Manufacturer
Taiwan Semiconductor
Datasheet
Description
MOSFET N-CH 600V 4A TO251
RoHS Status
Lead Free / RoHS Complaint
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TSM4NB60CH C5G
Taiwan Semiconductor
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TSM4NB60CH C5G
Taiwan Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Brand Introduction

Recognized for more than 40 years for its core competence in discrete power rectifiers, Taiwan Semiconductor has expanded its product portfolio to include trench schottkys, analog ICs, LED driver ICs, power transistors and MOSFETs, and now provides a complete solution from one source. Taiwan Semiconductor products are used in a vast array of applications in the electronics industry, including automotive, computer, consumer, industrial, telecom and photovoltaic.

Through strategic expansion of innovative manufacturing capabilities, and its focus on pioneering efficient semiconductor solutions, Taiwan Semiconductor is committed to being the right choice for a successful and lasting business relationship and offers these key advantages: Broad selection of semiconductor products from one source, Modern, efficient, and customer-oriented logistics processes, Maximum flexibility including customer specific requirements, Maximum level of quality and performance for customer applications.

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