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SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
Mfr. Part Number
SI2365EDS-T1-GE3
Manufacturer
Phoenix Passive Components / Vishay
Datasheet
Description
MOSFET P-CH 20V 5.9A TO236
RoHS Status
Lead Free / RoHS Complaint
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SI2365EDS-T1-GE3
Phoenix Passive Components / Vishay
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SI2365EDS-T1-GE3
Phoenix Passive Components / Vishay
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay's components today are smaller, faster, more reliable–all of it at the same time–empowering you to be more inventive and evolve your business.

From robots, to automobiles, to medical devices, The DNA of tech™ is behind you. Vishay is The DNA of tech.™

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