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GPI65015TO
GANFET N-CH 650V 15A TO220
Mfr. Part Number
GPI65015TO
Manufacturer
GaNPower
Datasheet
Datasheet
Description
GANFET N-CH 650V 15A TO220
RoHS Status
Lead Free / RoHS Complaint
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GPI65015TO
GaNPower
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 6 V
Vgs (Max)
+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds
123 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Brand Introduction

GaNPower develops high-performance Gallium Nitride (GaN) based power devices and related ICs in various packaging forms. With patented circuit topologies, we provide new-generation system solutions that are suitable for GaN technologies.

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