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GC11N65F
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Mfr. Part Number
GC11N65F
Manufacturer
Goford Semiconductor
Datasheet
Description
N650V,RD(MAX)<360M@10V,VTH2.5V~4
RoHS Status
Lead Free / RoHS Complaint
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GC11N65F
Goford Semiconductor
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GC11N65F
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
901 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
31.3W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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