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GT52N10T
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Mfr. Part Number
GT52N10T
Manufacturer
Goford Semiconductor
Datasheet
Description
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
RoHS Status
Lead Free / RoHS Complaint
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GT52N10T
Goford Semiconductor
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GT52N10T
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2626 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
227W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3 Full Pack
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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