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G60N10T
N100V,RD(MAX)<25M@10V,RD(MAX)<30
Mfr. Part Number
G60N10T
Manufacturer
Goford Semiconductor
Datasheet
Description
N100V,RD(MAX)<25M@10V,RD(MAX)<30
RoHS Status
Lead Free / RoHS Complaint
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G60N10T
Goford Semiconductor
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G60N10T
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
146 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3970 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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