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IPN80R1K4P7ATMA1
MOSFET N-CH 800V 4A SOT223
Mfr. Part Number
IPN80R1K4P7ATMA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET N-CH 800V 4A SOT223
RoHS Status
Lead Free / RoHS Complaint
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IPN80R1K4P7ATMA1
Infineon Technologies
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IPN80R1K4P7ATMA1
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
TO-261-4, TO-261AA
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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