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ISS55EP06LMXTSA1
MOSFET P-CH 60V 180MA SOT23-3
Mfr. Part Number
ISS55EP06LMXTSA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET P-CH 60V 180MA SOT23-3
RoHS Status
Lead Free / RoHS Complaint
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ISS55EP06LMXTSA1
Infineon Technologies
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ISS55EP06LMXTSA1
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id
2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23-3-5
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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