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PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3
Mfr. Part Number
PMH550UNEH
Manufacturer
Nexperia
Datasheet
Description
MOSFET N-CH 30V 770MA DFN0606-3
RoHS Status
Lead Free / RoHS Complaint
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PMH550UNEH
Nexperia
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PMH550UNEH
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
670mOhm @ 770mA, 4.5V
Vgs(th) (Max) @ Id
0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
30.3 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
380mW (Ta), 2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN0606-3
Package / Case
3-XFDFN
Brand Introduction

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 90 billion products, meeting the stringent standards set by the automotive industry. These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that save valuable energy and space.

With decades of experience in supplying to the world’s leading companies, Nexperia has over 12,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and ISO 45001.

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