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DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN
Mfr. Part Number
DMN2400UFB-7
Manufacturer
Diodes Incorporated
Datasheet
Description
MOSFET N-CH 20V 750MA 3DFN
RoHS Status
Lead Free / RoHS Complaint
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DMN2400UFB-7
Diodes Incorporated
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DMN2400UFB-7
Diodes Incorporated
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
470mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
X1-DFN1006-3
Package / Case
3-UFDFN
Brand Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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