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EPC2019
GANFET N-CH 200V 8.5A DIE
Mfr. Part Number
EPC2019
Manufacturer
EPC
Datasheet
Datasheet
Description
GANFET N-CH 200V 8.5A DIE
RoHS Status
Lead Free / RoHS Complaint
sample
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EPC2019
EPC
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
288 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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