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IGN1011L1200
GAN, RF POWER TRANSISTOR, L-BAND
Mfr. Part Number
IGN1011L1200
Manufacturer
Integra Technologies
Datasheet
Description
GAN, RF POWER TRANSISTOR, L-BAND
RoHS Status
Lead Free / RoHS Complaint
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IGN1011L1200
Integra Technologies
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IGN1011L1200
Integra Technologies
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Specifications
Product Description
Purchase & Inquiry
Transistor Type
HEMT
Frequency
1.03GHz ~ 1.09GHz
Gain
16.8dB
Voltage - Test
50 V
Current Rating (Amps)
-
Noise Figure
-
Current - Test
160 mA
Power - Output
1250W
Voltage - Rated
180 V
Package / Case
PL84A1
Supplier Device Package
PL84A1
Brand Introduction

Integra Technologies Inc. is a RF and Microwave High Power expert, innovating solutions for high performance defense and civil radar, avionics, data link, industrial and medical applications. Headquartered in El Segundo, CA, our products are manufactured using a 100% United States based supply chain.

We leverage our high-power semiconductor transistor portfolio and amplifier pallet expertise along with our system-level knowledge to solve our customers’ most challenging power requirements. Integra’s solutions cover UHF to X-band frequencies with power levels ranging from 10W to 4kW. We are enabling a new generation of high-performance applications with our patented Thermally Enhanced GaN/SiC technology by delivering industry leading performance for power at efficiencies over 80%.

Integra specializes in semi-custom and custom transistor and pallet solutions to provide fast turn, cost effective, tailored solutions to help our customers’ achieve their optimal system performance and get to market faster.

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