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FBG20N04AC
GAN FET HEMT200V 4A COTS 4FSMD-A
Mfr. Part Number
FBG20N04AC
Manufacturer
EPC Space
Datasheet
Description
GAN FET HEMT200V 4A COTS 4FSMD-A
RoHS Status
Lead Free / RoHS Complaint
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FBG20N04AC
EPC Space
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FBG20N04AC
EPC Space
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Specifications
Product Description
Purchase & Inquiry
FET Type
-
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 100V
Power - Max
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Supplier Device Package
4-SMD
Brand Introduction

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride (GaN) power management solutions for space and other harsh environments. Radiation-hardened GaN-based power devices address critical space-borne environments for applications, including power supplies, light detection and ranging (lidar), motor drives, and ion thrusters. EPC Space has been delivering space-grade eGaN® discrete devices and modules since 2017. Their products have been in orbit since 2019, with tens of thousands of units on board satellites, including satellites flying in LEO and GEO orbit with mission lives of 10+ years.

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