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APTM100TDU35PG
MOSFET 6N-CH 1000V 22A SP6-P
Mfr. Part Number
APTM100TDU35PG
Manufacturer
Microsemi
Datasheet
Description
MOSFET 6N-CH 1000V 22A SP6-P
RoHS Status
Lead Free / RoHS Complaint
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APTM100TDU35PG
Microsemi
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APTM100TDU35PG
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Specifications
Product Description
Purchase & Inquiry
FET Type
6 N-Channel (3-Phase Bridge)
FET Feature
Standard
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
22A
Rds On (Max) @ Id, Vgs
420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 25V
Power - Max
390W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P
Brand Introduction

Microsemi (Microchip Technology) - Microsemi Corporation was acquired by Microchip in May 2018. Microsemi offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal IC’s, FPGAs, SoCs, ASICs, power management products, timing, voice processing devices, discrete components, enterprise storage, and Power-over-Ethernet solutions.

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