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PAA12400BM3
1200V HALF-BRIDGE
Mfr. Part Number
PAA12400BM3
Manufacturer
PN Junction Semiconductor
Datasheet
Description
1200V HALF-BRIDGE
RoHS Status
Lead Free / RoHS Complaint
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PAA12400BM3
PN Junction Semiconductor
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PAA12400BM3
PN Junction Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
350A
Rds On (Max) @ Id, Vgs
7.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id
5V @ 100mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
29.5pF @ 1000V
Power - Max
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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