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EFC4C002NLTDG
POWER FIELD-EFFECT TRANSISTOR
Mfr. Part Number
EFC4C002NLTDG
Manufacturer
Texas Instruments
Datasheet
Description
POWER FIELD-EFFECT TRANSISTOR
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 5,239
Unit Price
$1.0000
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Reference Price
QuantityPrice
1$ 1.0000
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EFC4C002NLTDG
Texas Instruments
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
6200pF @ 15V
Power - Max
2.6W
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-XFBGA, WLCSP
Supplier Device Package
8-WLCSP (6x2.5)
Brand Introduction
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.
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