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IPG20N06S2L-35AATMA1
N-CHANNEL POWER MOSFET
Mfr. Part Number
IPG20N06S2L-35AATMA1
Manufacturer
Infineon Technologies
Datasheet
Description
N-CHANNEL POWER MOSFET
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 7,050
Unit Price
$1.0000
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Reference Price
QuantityPrice
1$ 1.0000
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IPG20N06S2L-35AATMA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 25V
Power - Max
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-10
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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