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PJS6603_S2_00001
30V COMPLEMENTARY ENHANCEMENT MO
Mfr. Part Number
PJS6603_S2_00001
Manufacturer
PANJIT
Datasheet
Description
30V COMPLEMENTARY ENHANCEMENT MO
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
FET Type
N and P-Channel Complementary
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs
48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.8nC @ 10V, 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 15V, 396pF @ 15V
Power - Max
1.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Supplier Device Package
SOT-23-6
Brand Introduction

PANJIT is a global IDM discrete semiconductor manufacturer capable to do wafer design, wafer fabrication, package assembly and test. With innovation and core technologies, PANJIT is able to continuously launch new generation wafers and highly efficient products to meet customers’ needs. PANJIT dedicated in manufacturing high quality and wide range of discrete semiconductors, serving consumer, power supply, industrial, automotive, communication and computing segments.

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