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PJT7601_R1_00001
20V COMPLEMENTARY ENHANCEMENT MO
Mfr. Part Number
PJT7601_R1_00001
Manufacturer
PANJIT
Datasheet
Description
20V COMPLEMENTARY ENHANCEMENT MO
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
FET Type
N and P-Channel Complementary
FET Feature
Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Rds On (Max) @ Id, Vgs
400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
67pF @ 10V, 38pF @ 10V
Power - Max
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Brand Introduction

PANJIT is a global IDM discrete semiconductor manufacturer capable to do wafer design, wafer fabrication, package assembly and test. With innovation and core technologies, PANJIT is able to continuously launch new generation wafers and highly efficient products to meet customers’ needs. PANJIT dedicated in manufacturing high quality and wide range of discrete semiconductors, serving consumer, power supply, industrial, automotive, communication and computing segments.

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