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CSD85312Q3E
MOSFET 2N-CH 20V 39A 8VSON
Mfr. Part Number
CSD85312Q3E
Manufacturer
Texas Instruments
Datasheet
Datasheet
Description
MOSFET 2N-CH 20V 39A 8VSON
RoHS Status
Lead Free / RoHS Complaint
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CSD85312Q3E
Texas Instruments
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CSD85312Q3E
Texas Instruments
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual) Common Source
FET Feature
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
39A
Rds On (Max) @ Id, Vgs
12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2390pF @ 10V
Power - Max
2.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-VSON (3.3x3.3)
Brand Introduction
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.
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