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TSM300NB06DCR RLG
DUAL N-CHANNEL POWER MOSFET 60V,
Mfr. Part Number
TSM300NB06DCR RLG
Manufacturer
Taiwan Semiconductor
Datasheet
Description
DUAL N-CHANNEL POWER MOSFET 60V,
RoHS Status
Lead Free / RoHS Complaint
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TSM300NB06DCR RLG
Taiwan Semiconductor
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TSM300NB06DCR RLG
Taiwan Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1079pF @ 30V
Power - Max
2W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)
Brand Introduction

Recognized for more than 40 years for its core competence in discrete power rectifiers, Taiwan Semiconductor has expanded its product portfolio to include trench schottkys, analog ICs, LED driver ICs, power transistors and MOSFETs, and now provides a complete solution from one source. Taiwan Semiconductor products are used in a vast array of applications in the electronics industry, including automotive, computer, consumer, industrial, telecom and photovoltaic.

Through strategic expansion of innovative manufacturing capabilities, and its focus on pioneering efficient semiconductor solutions, Taiwan Semiconductor is committed to being the right choice for a successful and lasting business relationship and offers these key advantages: Broad selection of semiconductor products from one source, Modern, efficient, and customer-oriented logistics processes, Maximum flexibility including customer specific requirements, Maximum level of quality and performance for customer applications.

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