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IPG20N06S4L26ATMA1
MOSFET 2N-CH 60V 20A TDSON-8
Mfr. Part Number
IPG20N06S4L26ATMA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET 2N-CH 60V 20A TDSON-8
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 6,072
Unit Price
$1.2700
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Reference Price
QuantityPrice
1$ 1.2700
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IPG20N06S4L26ATMA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
26mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1430pF @ 25V
Power - Max
33W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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