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SISF04DN-T1-GE3
MOSFET DUAL N-CH 30V PPAK 1212-8
Mfr. Part Number
SISF04DN-T1-GE3
Manufacturer
Phoenix Passive Components / Vishay
Datasheet
Description
MOSFET DUAL N-CH 30V PPAK 1212-8
RoHS Status
Lead Free / RoHS Complaint
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SISF04DN-T1-GE3
Phoenix Passive Components / Vishay
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SISF04DN-T1-GE3
Phoenix Passive Components / Vishay
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual) Common Drain
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs
4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 15V
Power - Max
5.2W (Ta), 69.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8SCD
Supplier Device Package
PowerPAK® 1212-8SCD
Brand Introduction

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay's components today are smaller, faster, more reliable–all of it at the same time–empowering you to be more inventive and evolve your business.

From robots, to automobiles, to medical devices, The DNA of tech™ is behind you. Vishay is The DNA of tech.™

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