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SI5902BDC-T1-GE3
MOSFET 2N-CH 30V 4A 1206-8
Mfr. Part Number
SI5902BDC-T1-GE3
Manufacturer
Phoenix Passive Components / Vishay
Datasheet
Description
MOSFET 2N-CH 30V 4A 1206-8
RoHS Status
Lead Free / RoHS Complaint
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SI5902BDC-T1-GE3
Phoenix Passive Components / Vishay
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SI5902BDC-T1-GE3
Phoenix Passive Components / Vishay
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
220pF @ 15V
Power - Max
3.12W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Brand Introduction

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay's components today are smaller, faster, more reliable–all of it at the same time–empowering you to be more inventive and evolve your business.

From robots, to automobiles, to medical devices, The DNA of tech™ is behind you. Vishay is The DNA of tech.™

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