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FF6MR12W2M1PB11BPSA1
MOSFET MODULE LOW POWER EASY
Mfr. Part Number
FF6MR12W2M1PB11BPSA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET MODULE LOW POWER EASY
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 7,672
Unit Price
$379.6800
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1$ 379.6800
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FF6MR12W2M1PB11BPSA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
20mW (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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