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FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
Mfr. Part Number
FF23MR12W1M1B11BOMA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET 2 N-CH 1200V 50A MODULE
RoHS Status
Lead Free / RoHS Complaint
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FF23MR12W1M1B11BOMA1
Infineon Technologies
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FF23MR12W1M1B11BOMA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
50A
Rds On (Max) @ Id, Vgs
23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
3950pF @ 800V
Power - Max
20mW
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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