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BSG0811NDATMA1
MOSFET 2N-CH 25V 19A/41A 8TISON
Mfr. Part Number
BSG0811NDATMA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET 2N-CH 25V 19A/41A 8TISON
RoHS Status
Lead Free / RoHS Complaint
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BSG0811NDATMA1
Infineon Technologies
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BSG0811NDATMA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
19A, 41A
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 12V
Power - Max
2.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TISON-8
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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