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2SB1261(1)-AZ
2SB1261 - PNP SILICON EPITAXIAL
Mfr. Part Number
2SB1261(1)-AZ
Manufacturer
Renesas Electronics Corporation
Datasheet
Datasheet
Description
2SB1261 - PNP SILICON EPITAXIAL
RoHS Status
Lead Free / RoHS Complaint
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2SB1261(1)-AZ
Renesas Electronics Corporation
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2SB1261(1)-AZ
Renesas Electronics Corporation
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Specifications
Product Description
Purchase & Inquiry
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 600mA, 2V
Power - Max
2 W
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252 (MP-3Z)
Brand Introduction
Renesas Electronics Corporation delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future.
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