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MX0912B351Y
RF POWER BIPOLAR TRANSISTOR, 1-E
Mfr. Part Number
MX0912B351Y
Manufacturer
Ampleon
Datasheet
Description
RF POWER BIPOLAR TRANSISTOR, 1-E
RoHS Status
Lead Free / RoHS Complaint
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MX0912B351Y
Ampleon
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In Stock: 1,670
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MX0912B351Y
Ampleon
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Specifications
Product Description
Purchase & Inquiry
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
1.215GHz
Noise Figure (dB Typ @ f)
-
Gain
8dB
Power - Max
960W
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Current - Collector (Ic) (Max)
21A
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-439A
Supplier Device Package
CDFM2
Brand Introduction

Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced LDMOS and GaN technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace, and defense applications.

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