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MT3S111TU,LF
RF SIGE NPN BIPOLAR TRANSISTOR N
Mfr. Part Number
MT3S111TU,LF
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Datasheet
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 2,937
Unit Price
$0.5800
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Reference Price
QuantityPrice
1$ 0.5800
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MT3S111TU,LF
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
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Specifications
Product Description
Purchase & Inquiry
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain
12.5dB
Power - Max
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Supplier Device Package
UFM
Brand Introduction

Toshiba Electronic Devices and Storage Corporation offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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