RN1701JE(TE85L,F) | Yingxinyuan Int'l(Group) Ltd

• • • • RN1701JE(TE85L,F)

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RN1701JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Mfr. Part Number

RN1701JE(TE85L,F)

Manufacturer

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

Datasheet

Description

TRANS 2NPN PREBIAS 0.1W ESV

RoHS Status

Lead Free / RoHS Complaint

sample

Free Sample

In Stock: 9,079

Unit Price

$0.4800

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Reference Price

Quantity	Price
1	$ 0.4800

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RN1701JE(TE85L,F)

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

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Specifications

Product Description

Purchase & Inquiry

Transistor Type

2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SOT-553

Supplier Device Package

ESV

Brand Introduction

Toshiba Electronic Devices and Storage Corporation offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.