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BAS16E6327HTSA1
DIODE GEN PURP 80V 250MA SOT23-3
Mfr. Part Number
BAS16E6327HTSA1
Manufacturer
Infineon Technologies
Datasheet
Description
DIODE GEN PURP 80V 250MA SOT23-3
RoHS Status
Lead Free / RoHS Complaint
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BAS16E6327HTSA1
Infineon Technologies
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BAS16E6327HTSA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
80 V
Current - Average Rectified (Io)
250mA
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 150 mA
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4 ns
Current - Reverse Leakage @ Vr
1 µA @ 75 V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
Operating Temperature - Junction
150°C (Max)
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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