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MBR500100CTR
DIODE MODULE 100V 250A 2TOWER
Mfr. Part Number
MBR500100CTR
Manufacturer
GeneSiC Semiconductor
Datasheet
Description
DIODE MODULE 100V 250A 2TOWER
RoHS Status
Lead Free / RoHS Complaint
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MBR500100CTR
GeneSiC Semiconductor
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MBR500100CTR
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
Diode Configuration
1 Pair Common Anode
Diode Type
Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
100 V
Current - Average Rectified (Io) (per Diode)
250A
Voltage - Forward (Vf) (Max) @ If
880 mV @ 250 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
1 mA @ 20 V
Operating Temperature - Junction
-55°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Supplier Device Package
Twin Tower
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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