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GHXS030A120S-D1
BRIDGE RECT 1P 1.2KV 30A SOT227
Mfr. Part Number
GHXS030A120S-D1
Manufacturer
SemiQ
Datasheet
Description
BRIDGE RECT 1P 1.2KV 30A SOT227
RoHS Status
Lead Free / RoHS Complaint
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GHXS030A120S-D1
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Single Phase
Technology
Silicon Carbide Schottky
Voltage - Peak Reverse (Max)
1.2 kV
Current - Average Rectified (Io)
30 A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 30 A
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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