DB105G | Yingxinyuan Int'l(Group) Ltd

• • • • DB105G

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DB105G

BRIDGE RECT 1PHASE 600V 1A DB

Mfr. Part Number

DB105G

Manufacturer

GeneSiC Semiconductor

Datasheet

Description

BRIDGE RECT 1PHASE 600V 1A DB

RoHS Status

Lead Free / RoHS Complaint

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DB105G

GeneSiC Semiconductor

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DB105G

GeneSiC Semiconductor

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Specifications

Product Description

Purchase & Inquiry

Diode Type

Single Phase

Technology

Standard

Voltage - Peak Reverse (Max)

600 V

Current - Average Rectified (Io)

1 A

Voltage - Forward (Vf) (Max) @ If

1.1 V @ 1 A

Current - Reverse Leakage @ Vr

10 µA @ 600 V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

4-EDIP (0.321", 8.15mm)

Supplier Device Package

Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.