Memory
Memory is a semiconductor device that is used as data storage device on an integrated circuit. These devices are available in several formats CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM, and SRAM in either Non-Volatile or Volatile. These devices memory sizes range from 64 b to 6 Tb with the interface being I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus, and 1-Wire.
Product List
Total Components: 5
ProductPricingDatasheetFunctionBattery ChemistryOperating TemperatureMounting TypePackage / CaseSupplier Device PackageProgrammable TypeMemory SizeVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device PackageController TypeVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device PackageMemory TypeMemory FormatTechnologyMemory SizeMemory InterfaceClock FrequencyWrite Cycle Time - Word, PageAccess TimeVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
K4S510432D-UC75T00
Samsung Semiconductor
1
$10.0000
Datasheet
-------------------VolatileDRAMSDRAM512Mb (128M x 4)LVTTL133 MHz-65 ns3V ~ 3.6V0°C ~ 70°C (TA)Surface Mount54-TSOP (0.400", 10.16mm Width)54-TSOP II
5,143
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RFQ
K4S510432D-UC75
Samsung Semiconductor
1
$12.0000
Datasheet
-------------------VolatileDRAMSDRAM512Mb (128M x 4)LVTTL133 MHz-65 ns3V ~ 3.6V0°C ~ 70°C (TA)Surface Mount54-TSOP (0.400", 10.16mm Width)54-TSOP II
7,988
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RFQ
K4B4G1646E-BYK000
Samsung Semiconductor
Datasheet
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8,588
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RFQ
K4B1G1646I-BYMA000
Samsung Semiconductor
Datasheet
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1,543
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RFQ
K4A4G085WE-BCRC
Samsung Semiconductor
Datasheet
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7,951
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RFQ