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Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Product List
Total Components: 349
ProductPricingDatasheetFET TypeVoltage - Breakdown (V(BR)GSS)Drain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Current Drain (Id) - MaxVoltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsResistance - RDS(On)Power - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
PN4303
onsemi
Datasheet
N-Channel30 V-4 mA @ 15 V-6 V @ 1 nA--625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
6,171
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RFQ
J113_D26Z
onsemi
Datasheet
N-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
3,937
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RFQ
J113_D75Z
onsemi
Datasheet
N-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
9,171
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RFQ
J111_D75Z
onsemi
Datasheet
N-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
6,044
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RFQ
PN4091
onsemi
Datasheet
N-Channel40 V-30 mA @ 20 V-5 V @ 1 nA16pF @ 20V30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
1,706
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RFQ
PN4092
onsemi
Datasheet
N-Channel40 V-15 mA @ 20 V-2 V @ 1 nA16pF @ 20V50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
7,402
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RFQ
J113_D27Z
onsemi
Datasheet
N-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
3,890
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RFQ
J111_D27Z
onsemi
Datasheet
N-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
5,244
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RFQ
U1897
onsemi
Datasheet
N-Channel40 V-30 mA @ 20 V-5 V @ 1 nA16pF @ 20V30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
4,551
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RFQ
U1898
onsemi
Datasheet
N-Channel40 V-15 mA @ 20 V-2 V @ 1 nA16pF @ 20V50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
6,024
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RFQ
PN4093
onsemi
Datasheet
N-Channel40 V-8 mA @ 20 V-1 V @ 1 nA16pF @ 20V80 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
6,467
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RFQ
PN4861
onsemi
Datasheet
N-Channel30 V-8 mA @ 15 V-800 mV @ 0.5 nA18pF @ 10V60 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
4,264
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RFQ
PN4302
onsemi
Datasheet
N-Channel30 V-500 µA @ 15 V-4 V @ 1 nA--625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
9,919
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RFQ
J112_D11Z
onsemi
Datasheet
N-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
8,804
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RFQ
PF5102
onsemi
Datasheet
N-Channel40 V-4 mA @ 15 V-700 mV @ 1 nA16pF @ 15V-625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
4,264
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RFQ
PF5103
onsemi
Datasheet
N-Channel40 V-10 mA @ 15 V-1.2 V @ 1 nA16pF @ 15V-625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
2,910
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RFQ
PN4117
onsemi
Datasheet
N-Channel40 V-30 µA @ 10 V-600 mV @ 1 nA3pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
9,757
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RFQ
PN4117A
onsemi
Datasheet
N-Channel40 V-30 µA @ 10 V-600 mV @ 1 nA3pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
3,055
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RFQ
PN4119
onsemi
Datasheet
N-Channel40 V-200 µA @ 10 V-2 V @ 1 nA3pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
3,004
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RFQ
PN4118
onsemi
Datasheet
N-Channel40 V-80 µA @ 10 V-1 V @ 1 nA3pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
4,856
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RFQ
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