Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Product List
Total Components: 349
ProductPricingDatasheetFET TypeVoltage - Breakdown (V(BR)GSS)Drain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Current Drain (Id) - MaxVoltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsResistance - RDS(On)Power - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MMBFJ309LT1
onsemi
Datasheet
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7,067
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MMBFU310LT1
onsemi
Datasheet
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4,123
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RFQ
PN4391
onsemi
Datasheet
N-Channel30 V-50 mA @ 20 V-4 V @ 1 nA14pF @ 20V30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
7,413
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RFQ
2N5457G
onsemi
Datasheet
N-Channel25 V25 V1 mA @ 15 V-500 mV @ 10 nA7pF @ 15V-310 mW135°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92 (TO-226)
3,077
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2N5458G
onsemi
Datasheet
N-Channel25 V25 V2 mA @ 15 V-1 V @ 10 nA7pF @ 15V-310 mW135°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92 (TO-226)
1,209
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RFQ
2N5460G
onsemi
Datasheet
P-Channel40 V-1 mA @ 15 V-750 mV @ 1 µA7pF @ 15V-350 mW-65°C ~ 135°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92 (TO-226)
4,814
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RFQ
2N5461G
onsemi
Datasheet
P-Channel40 V-2 mA @ 15 V-1 V @ 1 µA7pF @ 15V-350 mW-65°C ~ 135°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92 (TO-226)
1,444
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RFQ
J175
onsemi
Datasheet
P-Channel30 V-7 mA @ 15 V-3 V @ 10 nA-125 Ohms350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
9,780
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RFQ
2N3820
onsemi
Datasheet
P-Channel20 V-300 µA @ 10 V-8 V @ 10 µA32pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
5,039
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RFQ
2N5457_D74Z
onsemi
Datasheet
N-Channel25 V-1 mA @ 15 V-500 mV @ 10 nA7pF @ 15V-625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
1,408
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RFQ
2N5459
onsemi
Datasheet
N-Channel25 V-4 mA @ 15 V-2 V @ 10 nA7pF @ 15V-625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
8,927
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RFQ
2N5460_D27Z
onsemi
Datasheet
P-Channel40 V-1 mA @ 15 V-750 mV @ 1 µA7pF @ 15V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
3,408
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RFQ
2N5460_D74Z
onsemi
Datasheet
P-Channel40 V-1 mA @ 15 V-750 mV @ 1 µA7pF @ 15V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
7,262
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RFQ
2N5460_D75Z
onsemi
Datasheet
P-Channel40 V-1 mA @ 15 V-750 mV @ 1 µA7pF @ 15V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
7,085
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RFQ
2N5460_L99Z
onsemi
Datasheet
P-Channel40 V-5 mA @ 15 V-750 mV @ 1 µA7pF @ 15V-350 mW-65°C ~ 135°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92 (TO-226)
3,638
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RFQ
2N5638
onsemi
Datasheet
N-Channel30 V30 V50 mA @ 20 V--10pF @ 12V (VGS)30 Ohms350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
4,938
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RFQ
BF246A
onsemi
Datasheet
N-Channel30 V-30 mA @ 15 V-600 mV @ 100 nA--350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
3,774
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RFQ
BF246B
onsemi
Datasheet
N-Channel25 V-60 mA @ 15 V-600 mV @ 10 nA--625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
3,060
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RFQ
2N5457_D26Z
onsemi
Datasheet
N-Channel25 V-1 mA @ 15 V-500 mV @ 10 nA7pF @ 15V-625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
2,975
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RFQ
2N3820_D26Z
onsemi
Datasheet
P-Channel20 V-300 µA @ 10 V-8 V @ 10 µA32pF @ 10V-350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
4,697
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RFQ