Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Product List
Total Components: 1,153
ProductPricingDatasheetFET TypeVoltage - Breakdown (V(BR)GSS)Drain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Current Drain (Id) - MaxVoltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsResistance - RDS(On)Power - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
8885_2N5115
onsemi
Datasheet
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2,937
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RFQ
2SK2394-7-TB-E
onsemi
1
$1.0000
Datasheet
N-Channel-15 V16 mA @ 5 V50 mA300 mV @ 100 µA10pF @ 5V-200 mW150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-33-CP
1,000
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RFQ
2SK545-11D-TB-E
onsemi
Datasheet
N-Channel-40 V60 µA @ 10 V1 mA1.5 V @ 1 µA1.7pF @ 10V-125 mW-Surface MountTO-236-3, SC-59, SOT-23-3SMCP
4,191
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RFQ
5185-2N4392
onsemi
Datasheet
N-Channel40 V-----60 Ohms--Through HoleTO-206AA, TO-18-3 Metal Can-
7,954
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RFQ
2N2608
Central Semiconductor
Datasheet
P-Channel30 V-900 µA @ 5 V-1 V @ 1 µA--300 mW-Through HoleTO-206AA, TO-18-3 Metal CanTO-18
8,200
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RFQ
2N4341
Central Semiconductor
Datasheet
N-Channel50 V50 V3 mA @ 15 V-2 V @ 100 nA6pF @ 15V-325 mW-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
7,137
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RFQ
2N5115
Central Semiconductor
Datasheet
P-Channel30 V30 V15 mA @ 15 V-3 V @ 1 nA25pF @ 15V100 Ohms500 mW-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
1,087
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RFQ
2N5953
Central Semiconductor
Datasheet
N-Channel30 V-2.5 mA @ 15 V-800 mV @ 100 nA6pF @ 15V375 Ohms360 mW-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
1,024
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RFQ
BSV79
Central Semiconductor
Datasheet
N-Channel-40 V20 mA @ 15 V-2 V @ 1 nA5pF @ 10V40 Ohms350 mW-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
9,858
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RFQ
BSV80
Central Semiconductor
Datasheet
N-Channel-40 V10 mA @ 15 V-1 V @ 1 nA5pF @ 10V60 Ohms350 mW-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
9,219
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RFQ
PN4302
Central Semiconductor
Datasheet
N-Channel30 V-500 µA @ 15 V-4 V @ 1 nA--625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
6,522
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RFQ
CMPFJ310 BK
Central Semiconductor
Datasheet
N-Channel25 V25 V24 mA @ 10 V-2 V @ 1 nA5pF @ 10V-350 mW-65°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23
3,952
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RFQ
CMPFJ310 TR
Central Semiconductor
Datasheet
N-Channel25 V25 V24 mA @ 10 V-2 V @ 1 nA5pF @ 10V-350 mW-65°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23
8,196
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RFQ
2SK1070PICTL-E
Intersil (Renesas Electronics Corporation)
Datasheet
N-Channel22 V-12 mA @ 5 V50 mA0 V @ 10 µA9pF @ 5V-150 mW150°CSurface MountTO-236-3, SC-59, SOT-23-33-MPAK
1,123
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RFQ
2SK1070PIDTL-E
Intersil (Renesas Electronics Corporation)
Datasheet
N-Channel22 V-12 mA @ 5 V50 mA0 V @ 10 µA9pF @ 5V-150 mW150°CSurface MountTO-236-3, SC-59, SOT-23-33-MPAK
7,028
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RFQ
2SK1070PIETL-E
Intersil (Renesas Electronics Corporation)
Datasheet
N-Channel22 V-12 mA @ 5 V50 mA0 V @ 10 µA9pF @ 5V-150 mW150°CSurface MountTO-236-3, SC-59, SOT-23-33-MPAK
3,772
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RFQ
2SK1070PIETR-E
Intersil (Renesas Electronics Corporation)
Datasheet
N-Channel22 V-12 mA @ 5 V50 mA0 V @ 10 µA9pF @ 5V-150 mW150°CSurface MountTO-236-3, SC-59, SOT-23-33-MPAK
5,776
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RFQ
5285-MMBFJ201
onsemi
Datasheet
N-Channel40 V-200 µA @ 20 V-300 mV @ 10 nA--350 mW-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3
7,563
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RFQ
CP548-2N5116-CT
Central Semiconductor
Datasheet
P-Channel30 V600 mV5 mA @ 15 V50 mA1 V @ 1 nA25pF @ 15V150 Ohms--65°C ~ 150°C (TJ)Surface MountDieDie
1,488
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RFQ
2SK3666-2-TB-E
onsemi
1
$0.0600
Datasheet
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1,750
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RFQ