Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Product List
Total Components: 5
ProductPricingDatasheetIGBT TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
BIDD05N60T
Bourns, Inc.
1
$1.5700
Datasheet
Trench Field Stop600 V10 A15 A2V @ 15V, 5A82 W200µJ (on), 70µJ (off)Standard18.5 nC7ns/18ns400V, 5A, 10Ohm, 15V40 ns-55°C ~ 150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252 (DPAK)
2,545
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BIDW20N60T
Bourns, Inc.
1
$3.5100
Datasheet
Trench Field Stop600 V40 A60 A2.4V @ 15V, 20A192 W1mJ (on), 300µJ (off)Standard52 nC19ns/48ns400V, 20A, 10Ohm, 15V33.7 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
8,238
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BIDNW30N60H3
Bourns, Inc.
1
$3.9300
Datasheet
Trench Field Stop600 V60 A120 A2V @ 15V, 30A230 W1.85mJ (on), 450µJ (off)Standard76 nC30ns/67ns400V, 30A, 10Ohm, 15V28 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247N-3L
9,921
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BIDW30N60T
Bourns, Inc.
1
$4.3500
Datasheet
Trench Field Stop600 V60 A90 A1.65V @ 15V, 30A230 W1.85mJ (on), 450µJ (off)Standard76 nC30ns/67ns400V, 30A, 10Ohm, 15V40 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
5,605
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BIDW50N65T
Bourns, Inc.
1
$5.6200
Datasheet
Trench Field Stop650 V100 A150 A2.2V @ 15V, 50A416 W3mJ (on), 1.1mJ (off)Standard123 nC37ns/125ns400V, 50A, 10Ohm, 15V37.5 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
9,132
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