Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Product List
Total Components: 1
| Product | Pricing | Datasheet | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WG50N65DHWQ WeEn Semiconductors Co., Ltd | 1 $3.5500 | Datasheet | Trench Field Stop | 650 V | 91 A | 200 A | 2V @ 15V, 50A | 278 W | 1.7mJ (on), 600µJ (off) | Standard | 160 nC | 66ns/163ns | 400V, 50A, 10Ohm, 15V | 105 ns | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 5,013 Cart + RFQ |