Transistors - IGBTs - Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
Product List
Total Components: 1
Product | Pricing | Datasheet | IGBT Type | Configuration | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Power - Max | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GB100XCP12-227 GeneSiC Semiconductor | Datasheet | PT | Single | 1200 V | 100 A | - | 2V @ 15V, 100A | 1 mA | 8.55 nF @ 25 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 | 8,210 Cart + RFQ |