Transistors - IGBTs - Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
Product List
Total Components: 1
ProductPricingDatasheetIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
GB100XCP12-227
GeneSiC Semiconductor
Datasheet
PTSingle1200 V100 A-2V @ 15V, 100A1 mA8.55 nF @ 25 VStandardNo-40°C ~ 175°C (TJ)Chassis MountSOT-227-4SOT-227
8,210
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