
Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 704
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() APT1001RBVRG Microchip Technology | 1 $14.6200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | Through Hole | TO-247 [B] | TO-247-3 | 3,230 Cart + RFQ |
![]() APT5010LVRG Microchip Technology | 1 $19.1400 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA | 1,648 Cart + RFQ |
![]() MSC040SMA120S/TR Microchip Technology | 1 $27.8500 | Datasheet | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 6,088 Cart + RFQ |
![]() APT10050LVRG Microchip Technology | 1 $24.8700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA | 5,997 Cart + RFQ |
![]() APT50M75JLLU2 Microchip Technology | 1 $32.4200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 7,862 Cart + RFQ |
![]() APT5010JVFR Microchip Technology | 1 $41.0500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 7,792 Cart + RFQ |
![]() APT8030JVFR Microchip Technology | 1 $41.0500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 8,890 Cart + RFQ |
![]() APT8M100B Microchip Technology | 1 $4.7000 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 1885 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 7,414 Cart + RFQ |
![]() 2N6660 Microchip Technology | 1 $16.5700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 410mA (Ta) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 24 V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can | 2,030 Cart + RFQ |
![]() MSC040SMA120B4 Microchip Technology | 1 $26.6400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 8,070 Cart + RFQ |
![]() APT77N60JC3 Microchip Technology | 1 $38.3900 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 1,935 Cart + RFQ |
![]() APT60M60JFLL Microchip Technology | 1 $96.6300 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 9,174 Cart + RFQ |
![]() LND150N3-G-P002 Microchip Technology | 1 $0.5390 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 5,901 Cart + RFQ |
![]() LND150N3-G-P013 Microchip Technology | 1 $0.5390 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 5,137 Cart + RFQ |
![]() VN10KN3-G-P003 Microchip Technology | 1 $0.5610 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 3,120 Cart + RFQ |
![]() VN10KN3-G-P013 Microchip Technology | 1 $0.5610 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 8,973 Cart + RFQ |
![]() VN10KN3-G-P014 Microchip Technology | 1 $0.5610 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 7,507 Cart + RFQ |
![]() TN5325N3-G-P002 Microchip Technology | 1 $0.6710 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 250 V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 740mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 5,202 Cart + RFQ |
![]() TP5322N8-G Microchip Technology | 1 $0.6710 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 220 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA | 5,931 Cart + RFQ |
![]() VN0104N3-G-P013 Microchip Technology | 1 $0.7040 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 40 V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 8,043 Cart + RFQ |