
Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 704
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
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![]() APT56M50L Microchip Technology | 1 $12.0200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA | 8,764 Cart + RFQ |
![]() APT56F50B2 Microchip Technology | 1 $13.8200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant | 1,412 Cart + RFQ |
![]() APT47N60BC3G Microchip Technology | 1 $14.0100 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 8,724 Cart + RFQ |
![]() MSC080SMA120B4 Microchip Technology | 1 $14.0900 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 9,042 Cart + RFQ |
![]() APT30M70BVRG Microchip Technology | 1 $14.2200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 300 V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 5870 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 2,007 Cart + RFQ |
![]() MSC080SMA120S Microchip Technology | 1 $14.6600 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 2,867 Cart + RFQ |
![]() MSC035SMA070B Microchip Technology | 1 $16.0700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99 nC @ 20 V | +25V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 5,049 Cart + RFQ |
![]() VN2210N2 Microchip Technology | 1 $17.5800 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can | 6,475 Cart + RFQ |
![]() APT5010LLLG Microchip Technology | 1 $17.6700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA | 3,265 Cart + RFQ |
![]() APT37M100L Microchip Technology | 1 $22.7500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA | 3,305 Cart + RFQ |
![]() APT28M120B2 Microchip Technology | 1 $24.6300 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1200 V | 29A (Tc) | 10V | 560mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant | 1,393 Cart + RFQ |
![]() MSC040SMA120B Microchip Technology | 1 $25.8700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 9,180 Cart + RFQ |
![]() APT17F120J Microchip Technology | 1 $34.0700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 7,322 Cart + RFQ |
![]() APT5010JVRU2 Microchip Technology | 1 $34.6100 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 6,285 Cart + RFQ |
![]() APT10045JLL Microchip Technology | 1 $46.0900 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC | 8,627 Cart + RFQ |
![]() MSC40SM120JCU3 Microchip Technology | 1 $47.6700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC | 9,635 Cart + RFQ |
![]() MSC40SM120JCU2 Microchip Technology | 1 $47.6700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC | 7,267 Cart + RFQ |
![]() MIC94050YM4-TR Microchip Technology | 1 $0.6300 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 6 V | 1.8A (Ta) | 1.8V, 4.5V | 160mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600 pF @ 5.5 V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA | 7,710 Cart + RFQ |
![]() VN2110K1-G Microchip Technology | 1 $0.6700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 100 V | 200mA (Tj) | 5V, 10V | 4Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 5,925 Cart + RFQ |
![]() 2N7000-G Microchip Technology | 1 $0.5200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 8,250 Cart + RFQ |