Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 704
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
VP0109N3-G
Microchip Technology
1
$1.2100
Datasheet
P-ChannelMOSFET (Metal Oxide)90 V250mA (Tj)5V, 10V8Ohm @ 500mA, 10V3.5V @ 1mA-±20V60 pF @ 25 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
9,950
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VN3205N8-G
Microchip Technology
1
$1.8900
Datasheet
N-ChannelMOSFET (Metal Oxide)50 V1.5A (Tj)4.5V, 10V300mOhm @ 1.5A, 10V2.4V @ 10mA-±20V300 pF @ 25 V-1.6W (Ta)-55°C ~ 150°C (TJ)Surface MountTO-243AA (SOT-89)TO-243AA
6,255
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VN3205N3-G
Microchip Technology
1
$1.7400
Datasheet
N-ChannelMOSFET (Metal Oxide)50 V1.2A (Tj)4.5V, 10V300mOhm @ 3A, 10V2.4V @ 10mA-±20V300 pF @ 25 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
5,853
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DN2540N5-G
Microchip Technology
1
$1.8400
Datasheet
N-ChannelMOSFET (Metal Oxide)400 V500mA (Tj)0V25Ohm @ 120mA, 0V--±20V300 pF @ 25 VDepletion Mode15W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
8,658
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VP3203N3-G
Microchip Technology
1
$1.9300
Datasheet
P-ChannelMOSFET (Metal Oxide)30 V650mA (Tj)4.5V, 10V600mOhm @ 3A, 10V3.5V @ 10mA-±20V300 pF @ 25 V-740mW (Ta)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
9,006
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LP0701N3-G
Microchip Technology
1
$2.0500
Datasheet
P-ChannelMOSFET (Metal Oxide)16.5 V500mA (Tj)2V, 5V1.5Ohm @ 300mA, 5V1V @ 1mA-±10V250 pF @ 15 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92TO-226-3, TO-92-3 (TO-226AA)
4,840
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VN1206L-G
Microchip Technology
1
$2.2600
Datasheet
N-ChannelMOSFET (Metal Oxide)120 V230mA (Tj)2.5V, 10V6Ohm @ 500mA, 10V2V @ 1mA-±30V125 pF @ 25 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
9,077
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VN2210N3-G
Microchip Technology
1
$2.6000
Datasheet
N-ChannelMOSFET (Metal Oxide)100 V1.2A (Tj)5V, 10V350mOhm @ 4A, 10V2.4V @ 10mA-±20V500 pF @ 25 V-740mW (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
8,319
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DN3765K4-G
Microchip Technology
1
$3.4300
Datasheet
N-ChannelMOSFET (Metal Oxide)650 V300mA (Tj)0V8Ohm @ 150mA, 0V--±20V825 pF @ 25 VDepletion Mode2.5W (Ta)-55°C ~ 150°C (TJ)Surface MountTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
7,513
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APT24F50B
Microchip Technology
1
$4.9900
Datasheet
N-ChannelMOSFET (Metal Oxide)500 V24A (Tc)10V240mOhm @ 11A, 10V5V @ 1mA90 nC @ 10 V±30V3630 pF @ 25 V-335W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 [B]TO-247-3
5,868
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APT7M120B
Microchip Technology
1
$5.9300
Datasheet
N-ChannelMOSFET (Metal Oxide)1200 V8A (Tc)10V2.5Ohm @ 3A, 10V5V @ 1mA80 nC @ 10 V±30V2565 pF @ 25 V-335W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 [B]TO-247-3
5,526
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MSC750SMA170B4
Microchip Technology
1
$6.0000
Datasheet
N-ChannelSiCFET (Silicon Carbide)1700 V7A (Tc)20V940mOhm @ 2.5A, 20V3.25V @ 100µA (Typ)11 nC @ 20 V+23V, -10V184 pF @ 1360 V-68W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
7,533
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MSC750SMA170S
Microchip Technology
1
$6.6100
Datasheet
-SiCFET (Silicon Carbide)1700 V6A (Tc)---------Surface MountD3PAKTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
5,649
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APT42F50B
Microchip Technology
1
$10.5300
Datasheet
N-ChannelMOSFET (Metal Oxide)500 V42A (Tc)10V130mOhm @ 21A, 10V5V @ 1mA170 nC @ 10 V±30V6810 pF @ 25 V-625W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 [B]TO-247-3
4,453
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APT106N60B2C6
Microchip Technology
1
$17.2200
Datasheet
N-ChannelMOSFET (Metal Oxide)600 V106A (Tc)10V35mOhm @ 53A, 10V3.5V @ 3.4mA308 nC @ 10 V±20V8390 pF @ 25 V-833W (Tc)-55°C ~ 150°C (TJ)Through HoleT-MAX™ [B2]TO-247-3 Variant
9,314
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APT10090BLLG
Microchip Technology
1
$17.4600
Datasheet
N-ChannelMOSFET (Metal Oxide)1000 V12A (Tc)10V950mOhm @ 6A, 10V5V @ 1mA71 nC @ 10 V±30V1969 pF @ 25 V-298W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 [B]TO-247-3
1,423
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APT29F100B2
Microchip Technology
1
$19.7000
Datasheet
N-ChannelMOSFET (Metal Oxide)1000 V30A (Tc)10V440mOhm @ 16A, 10V5V @ 2.5mA260 nC @ 10 V±30V8500 pF @ 25 V-1040W (Tc)-55°C ~ 150°C (TJ)Through HoleT-MAX™ [B2]TO-247-3 Variant
8,206
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MSC080SMA120J
Microchip Technology
1
$30.7600
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V37A (Tc)---------55°C ~ 175°C (TJ)Chassis MountSOT-227 (ISOTOP®)SOT-227-4, miniBLOC
4,049
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MSC400SMA330B4
Microchip Technology
1
$34.2900
Datasheet
N-ChannelSiCFET (Silicon Carbide)3300 V11A (Tc)20V520mOhm @ 5A, 20V2.97V @ 1mA37 nC @ 20 V+23V, -10V579 pF @ 2400 V-131W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4TO-247-4
8,139
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MSC035SMA170B4
Microchip Technology
1
$43.0100
Datasheet
N-ChannelSiCFET (Silicon Carbide)1700 V68A (Tc)20V45mOhm @ 30A, 20V3.25V @ 2.5mA (Typ)178 nC @ 20 V+23V, -10V3300 pF @ 1000 V-370W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
8,072
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