Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 704
| Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VN3205N3-G-P002 Microchip Technology | 1 $1.4080 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 50 V | 1.2A (Tj) | 4.5V, 10V | 300mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 2,314 Cart + RFQ |
TP2522N8-G Microchip Technology | 1 $1.4520 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 220 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA | 4,148 Cart + RFQ |
TP2540N3-G-P002 Microchip Technology | 1 $1.4850 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 400 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) | 4,605 Cart + RFQ |
VN1206L-G-P002 Microchip Technology | 1 $1.7930 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 120 V | 230mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±30V | 125 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 2,044 Cart + RFQ |
VP0550N3-G-P013 Microchip Technology | 1 $1.8370 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 500 V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 7,038 Cart + RFQ |
DN2540N3-G-P003 Microchip Technology | 1 $1.0700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 400 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) | 6,279 Cart + RFQ |
TN2640LG-G Microchip Technology | 1 $1.9140 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 400 V | 260mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | 8,434 Cart + RFQ |
APT7F100B Microchip Technology | 1 $4.3350 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | 5V @ 500µA | 58 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 5,307 Cart + RFQ |
APT9M100B Microchip Technology | 1 $2.1750 100 $1.7400 500 $1.4500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2605 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 1,300 Cart + RFQ |
APT4F120S Microchip Technology | 1 $4.5000 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1200 V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1385 pF @ 25 V | - | 175W (Tc) | - | Surface Mount | D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 8,204 Cart + RFQ |
APT18F60B Microchip Technology | 1 $4.6050 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 390mOhm @ 9A, 10V | 5V @ 1mA | 90 nC @ 10 V | ±30V | 3550 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 8,882 Cart + RFQ |
APT12M80B Microchip Technology | 1 $4.9500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 800mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2470 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 6,356 Cart + RFQ |
APT11F80B Microchip Technology | 1 $5.0100 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2471 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 9,235 Cart + RFQ |
APT9F100B Microchip Technology | 1 $5.2050 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2606 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 4,957 Cart + RFQ |
APT30N60BC6 Microchip Technology | 1 $5.8400 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | ±20V | 2267 pF @ 25 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 4,585 Cart + RFQ |
APT23F60B Microchip Technology | 1 $6.2370 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | 5V @ 1mA | 110 nC @ 10 V | ±30V | 4415 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 3,877 Cart + RFQ |
APT30F50S Microchip Technology | 1 $6.6660 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | ±30V | 4525 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 9,334 Cart + RFQ |
APT7M120S Microchip Technology | 1 $7.0290 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8,069 Cart + RFQ |
APT14M100B Microchip Technology | 1 $7.7880 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 5,514 Cart + RFQ |
APT17F80B Microchip Technology | 1 $7.8760 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | 5V @ 1mA | 122 nC @ 10 V | ±30V | 3757 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 2,661 Cart + RFQ |